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 PNP Silicon RF Transistor
q
BF 569
For oscillators, mixers and self-oscillating mixer stages in UHF TV tuners
Type BF 569
Marking LHs
Ordering Code (tape and reel) Q62702-F869
Pin Configuration 1 2 3 B E C
Package1) SOT-23
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation, TA 25 C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Rth JA
Symbol VCE0 VCB0 VEB0 IC IB Ptot Tj Tstg
Values 35 40 3 30 5 280 150 - 55 ... + 150
Unit V
mA mW C
450
K/W
1) 2)
For detailed information see chapter Package Outlines. Package mounted on alumina 15 mm x 16.7 mm x 0.7 mm.
Semiconductor Group
1
07.94
BF 569
Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector cutoff current VCB = 20 V, IE = 0 DC current gain IC = 3 mA, VCE = 10 V AC Characteristics Transition frequency IC = 3 mA, VCE = 10 V, f = 100 MHz Collector-base capacitance VCB = 10 V, VBE = 0 V, f = 1 MHz Collector-emitter capacitance VCE = 10 V, VBE = 0 V, f = 1 MHz Noise figure IC = 3 mA, VCB = 10 V, f = 800 MHz RS = 60 Common base power gain IC = 3 mA, VCB = 10 V, f = 800 MHz RL = 500 fT Ccb Cce F - - - - 950 0.32 0.15 4.5 - - - - dB MHz pF V(BR) CE0 ICB0 hFE 35 - 20 - - 50 - 100 - V nA - Values typ. max. Unit
Gp
-
14.8
-
Semiconductor Group
2
BF 569
Total power dissipation Ptot = f (TA)
Transition frequency fT = f (IC) VCE = 10 V, f = 100 MHz
Collector-base capacitance Ccb = f (VCB) f = 1 MHz
Semiconductor Group
3


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